Oxide semiconductor device

US9847428B1 · kind B1 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Zhibiao Zhou · Singapore, SG
• Ding-Lung Chen · Singapore, SG

Key dates

• Filing date: Aug 8, 2016
• Grant date: Dec 19, 2017
• Expiry date: Aug 8, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6757

Abstract

An oxide semiconductor device includes an oxide semiconductor transistor including a first gate electrode, a second gate electrode, a third gate electrode, a first oxide semiconductor channel layer, a second oxide semiconductor channel layer, and two source/drain electrodes. The second gate electrode is disposed above the first gate electrode. The third gate electrode is disposed above the second gate electrode. At least a part of the first oxide semiconductor channel layer is disposed between the first gate electrode and the second gate electrode. At least a part of the second oxide semiconductor channel layer is disposed between the second gate electrode and the third gate electrode. At least a part of each source/drain electrode is disposed between the first oxide semiconductor channel layer and the second oxide semiconductor channel layer. Each source/drain electrode contacts the first oxide semiconductor channel layer and the second oxide semiconductor channel layer.