Resistive memory devices with an oxygen-supplying layer
US9847482B2 · kind B2 · utility
5Cited by
2References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 29, 2014 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Apr 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A resistive memory device includes a bottom electrode and a top electrode crossing the bottom electrode at a non-zero angle. A switching region operatively contacts the bottom electrode and the top electrode. The switching region defines a current path between the bottom electrode and the top electrode in an ON state. An oxygen-supplying layer operatively contacts a portion of the switching region. The oxygen-supplying layer is positioned orthogonally to the current path and to the switching region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.