CMP compositions and methods for selective removal of silicon nitride
US9850402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2013 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | May 27, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.