Method for the fabrication of electron field emission devices including carbon nanotube field electron emisson devices
US9852870B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2011 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jan 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/30469
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method for the fabrication of electron field emitter devices, including carbon nanotube (CNT) field emission devices. The method of the present invention involves depositing one or more electrically conductive thin-film layers onto a electrically conductive substrate and performing lithography and etching on these thin film layers to pattern them into the desired shapes. The top-most layer may be of a material type that acts as a catalyst for the growth of single- or multiple-walled carbon nanotubes (CNTs). Subsequently, the substrate is etched to form a high-aspect ratio post or pillar structure onto which the previously patterned thin film layers are positioned. Carbon nanotubes may be grown on the catalyst material layer. The present invention also described methods by which the individual field emission devices may be singulated into individual die from a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.