Field effect transistor
US9852911B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 20, 2015 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Aug 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor layer, a first electrode located over the semiconductor layer and connected to the semiconductor layer, a second electrode spaced from the first electrode and located over the semiconductor layer and connected to the semiconductor layer, an insulation film located over the semiconductor layer, and a third electrode interposed between the first electrode and the second electrode, and location over a portion of the insulation film. The insulation film includes a first layer located on the semiconductor layer and between the first electrode and the second electrode and comprising silicon nitride, and a second layer located on the first layer and between the first electrode and the third electrode as well as between the second electrode and the third electrode, and comprising silicon nitride and an amount of oxygen larger than the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.