Solderable contact and passivation for semiconductor dies
US9852939B2 · kind B2 · utility
0Cited by
7References
15Claims
0Family size
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Key dates
| Filing date | Jan 30, 2013 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jan 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silver-containing solderable contact on a semiconductor die has its outer edge spaced from the confronting edge of an epoxy passivation layer so that, after soldering, silver ions are not present and are not therefor free to migrate under the epoxy layer to form dendrites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.