Semiconductor memory device and method for manufacturing the same
US9852942B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jul 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, and a plurality of columnar parts. The stacked body is provided on the substrate. The stacked body includes a plurality of electrode films stacked separately from each other. The plurality of columnar parts is provided in the stacked body. Each of the plurality of columnar parts includes a semiconductor pillar extending in a stacking direction of the stacked body, and a charge storage film provided between the semiconductor pillar and the stacked body. The plurality of electrode films includes a first electrode film provided in upper layers of the stacked body and a second electrode film provided in lower layers of the stacked body. A thickness of the first electrode film is thicker than a thickness of the second electrode film. The first electrode film is provided with a void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.