Patent · US Active

Optoelectronic semiconductor chip and optoelectronic component

US9853018B2 · kind B2 · utility

0Cited by
8References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 10, 2014
Grant dateDec 26, 2017
Priority date
Expiry dateSep 10, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/032
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.