Semiconductor device and method for fabricating the same
US9853021B1 · kind B1 · utility
7Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2017 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jun 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0179
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a shallow trench isolation (STI) adjacent to the first fin-shaped structure; and forming a gate structure on the first fin-shaped structure and the STI. Preferably, the gate structure comprises a left portion and the right portion and the work functions in the left portion and the right portion are different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.