Semiconductor device
US9853024B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2015 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Sep 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device having a low on-voltage of IGBT and a small reverse recovery current of the diode is provided. The semiconductor device includes a semiconductor substrate having a gate trench and a dummy trench. The semiconductor substrate includes emitter, body, barrier and pillar regions between the gate trench and the dummy trench. The emitter region is an n-type region being in contact with the gate insulating film and exposed on a front surface. The body region is a p-type region being in contact with the gate insulating film at a rear surface side of the emitter region. The barrier region is an n-type region being in contact with the gate insulating film at a rear surface side of the body region and in contact with the dummy insulating film. The pillar region is an n-type region connected to the front surface electrode and the barrier region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.