Semiconductor device having channel holes
US9853045B2 · kind B2 · utility
5Cited by
14References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jun 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
Abstract
A semiconductor device includes a gate stack including gate electrodes stacked vertically on a substrate. Channel holes penetrate through the gate stack to extend vertically to the substrate. Each of the channel holes includes a channel region. First channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the first channel pads includes at least one first conductivity-type impurity. Second channel pads are each disposed at an end of a respective channel hole opposite the substrate. Each of the second channel pads includes at least one second conductivity-type impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.