Tunnel field-effect transistor
US9853102B2 · kind B2 · utility
3Cited by
0References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Aug 8, 2014 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Aug 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A tunnel field-effect transistor and method fabricating the same are provided. The tunnel field-effect transistor includes a drain region, a source region with opposite conductive type to the drain region, a channel region disposed between the drain region and the source region, a metal gate layer disposed around the channel region, and a high-k dielectric layer disposed between the metal gate layer and the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.