Semiconductor device and method of formation
US9853105B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Dec 15, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Dec 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13088
Abstract
A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.