Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same

US9853114B1 · kind B1 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Mark S. Rodder · Dallas, US
• Borna J. Obradovic · Leander, US

Key dates

• Filing date: Mar 14, 2017
• Grant date: Dec 26, 2017
• Expiry date: Mar 14, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/121

Abstract

A field effect transistor (FET) for an nFET and/or a pFET device including a fin having a stack of nanowire-like channel regions. The stack includes at least a first nanowire-like channel region and a second nanowire-like channel region stacked on the first nanowire-like channel region. The FET includes source and drain electrodes on opposite sides of the fin. The FET also includes a dielectric separation region including SiGe between the first and second nanowire-like channel regions extending completely from a surface of the second channel region facing the first channel region to a surface of the first channel region facing the second channel region. The FET includes a gate stack extending along a pair of sidewalls of the stack. The gate stack includes a gate dielectric layer and a metal layer on the gate dielectric layer. The metal layer does not extend between the first and second nanowire-like channel regions.