Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes
US9853141B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 4, 2014 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Aug 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Higher voltage resistance is accomplished by expanding a depletion layer more quickly within a circumferential region. A semiconductor device includes an element region, in which an insulated gate type switching element is provided, and the circumferential region. A first trench and a second trench spaced apart from the first trench are provided in the front surface in the circumferential region. Insulating films are provided in the first trench and the second trench. A fourth region of the second conductivity type is provided so as to extend from a bottom surface of the first trench to a bottom surface of the second trench. A fifth region of the first conductivity type continuous from the third region is provided under the fourth region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.