Source/drain contacts for non-planar transistors
US9853156B2 · kind B2 · utility
2Cited by
12References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2015 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Feb 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.