Photovoltaic device including a back contact and method of manufacturing
US9853177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2016 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jan 11, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.