Precessional spin current structure for MRAM
US9853206B2 · kind B2 · utility
85Cited by
128References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 2015 |
| Grant date | Dec 26, 2017 |
| Priority date | — |
| Expiry date | Jul 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.