Semiconductor devices comprising 2D-materials and methods of manufacture thereof
US9859115B2 · kind B2 · utility
3Cited by
15References
20Claims
0Family size
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Key dates
| Filing date | Feb 13, 2015 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Feb 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices comprising two-dimensional (2D) materials and methods of manufacture thereof are described. In an embodiment, a method for manufacturing a semiconductor device comprising 2D materials may include: epitaxially forming a first 2D material layer on a substrate; and epitaxially forming a second 2D material layer over the first 2D material layer, the first 2D material layer and the second 2D material layer differing in composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.