Semiconductor device having an airbridge and method of fabricating the same
US9859205B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2014 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Feb 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming an airbridge extending from a conductive area of the semiconductor device are provided. The semiconductor device includes a device pattern formed on a semiconductor substrate, a seed layer formed on the device pattern, and an airbridge formed on the seed layer, where the airbridge includes a plated conductive material and defines an opening exposing a portion of the device pattern. The semiconductor device further includes an adhesion layer formed on the airbridge layer and extending over at least a portion of sidewalls of the opening defined by the airbridge, and an insulating layer formed on the adhesion layer, where the adhesion layer enhances adhesion of the insulating layer to the plated conductive material of the airbridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.