Photoactive compound gradient photoresist
US9859206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2014 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A system and method for forming photoresists over semiconductor substrates is provided. An embodiment comprises a photoresist with a concentration gradient. The concentration gradient may be formed by using a series of dry film photoresists, wherein each separate dry film photoresist has a different concentration. The separate dry film photoresists may be formed separately and then placed onto the semiconductor substrate before being patterned. Once patterned, openings through the photoresist may have a tapered sidewall, allowing for a better coverage of the seed layer and a more uniform process to form conductive materials through the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.