Backside cavity formation in semiconductor devices
US9859225B2 · kind B2 · utility
9Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15313
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, removing at least a portion of the interface material to form a trench, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.