Semiconductor structure and manufacturing process thereof
US9859273B2 · kind B2 · utility
5Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2015 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0193
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of manufacturing a semiconductor structure is provided. The process begins with forming a work function metal layer on a substrate, and a hardmask is covered over the work function metal layer. A trench is formed to penetrate the hardmask and the work function metal layer, and an isolation structure is filled in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.