Integrated circuit device and method of manufacturing the same
US9859392B2 · kind B2 · utility
8Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Sep 19, 2016 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Sep 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
Abstract
An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.