Semiconductor and template for growing semiconductors
US9859457B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2015 |
| Grant date | Jan 2, 2018 |
| Priority date | — |
| Expiry date | Jun 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A template for a semiconductor device is made by providing an AGN substrate, growing a first layer of Group III nitrides on the substrate, depositing a thin metal layer on the first layer, annealing the metal such as gold so that it agglomerates to form a pattern of islands on the first layer; transferring the pattern into the first layer by etching then removing excess metal; and then depositing a second Group III nitride layer on the first layer. The second layer, through lateral overgrowth, coalesces over the gaps in the island pattern leaving a smooth surface with low defect density. A Group III semiconductor device may then be grown on the template, which may then be removed. Chlorine gas may be used for etching the pattern in the first layer and the remaining gold removed with aqua regia.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.