Small-sized light-emitting diode chiplets and method of fabrication thereof

US9859468B2 · kind B2 · utility

Assignee

• Palo Alto Research Center Incorporated · US

Inventors

• Thomas Wunderer · Palo Alto, US
• Christopher L. Chua · San Jose, US
• Noble M. Johnson · Menlo Park, US

Key dates

• Filing date: Mar 28, 2017
• Grant date: Jan 2, 2018
• Expiry date: Mar 28, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

Diode includes first metal layer, coupled to p-type III-N layer and to first terminal, has a substantially equal lateral size to the p-type III-N layer. Central portion of light emitting region on first side and first metal layer includes first via that is etched through p-type portion, light emitting region and first part of n-type III-N portion. Second side of central portion of light emitting region that is opposite to first side includes second via connected to first via. Second via is etched through second part of n-type portion. First via includes second metal layer coupled to intersection between first and second vias. Electrically-insulating layer is coupled to first metal layer, first via, and second metal layer. First terminals are exposed from electrically-insulating layer. Third metal layer including second terminal is coupled to n-type portion on second side of light emitting region and to second metal layer through second via.