Method for pulling silicon single crystal
US9863059B2 · kind B2 · utility
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3References
5Claims
0Family size
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Key dates
| Filing date | Jun 29, 2013 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Sep 10, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for pulling silicon single crystal includes a process of placing a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of the inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is placed between the susceptor's inner surface and the crucible's outer surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.