Boron implanting using a co-gas

US9865430B2 · kind B2 · utility

Assignee

• Varian Semiconductor Equipment Associates, Inc. · US

Inventors

• Bon-Woong Koo · Andover, US
• Vikram M. Bhosle · North Reading, US
• John A. Frontiero · Rockport, US
• Nicholas P. T. Bateman · Reading, US
• Timothy J. Miller · Ipswich, US
• Svetlana B. Radovanov · Marblehead, US
• Min Sung JEON · Jeonju-si, KR
• Peter F. Kurunczi · Cambridge, US
• Christopher J. Leavitt · Gloucester, US

Key dates

• Filing date: Nov 23, 2015
• Grant date: Jan 9, 2018
• Expiry date: Nov 23, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/0822
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. This is especially beneficial in non-mass analyzed implanters, where all ions are implanted into the workpiece. In one embodiment, a first source gas, comprising a dopant and a halogen is introduced into an ion source chamber, a second source gas comprising a hydride, and a third source gas comprising a noble gas are also introduced. The combination of these three source gases produces an ion beam having a higher percentage of pure dopant ions than would occur if the third source gas were not used.