Semiconductor devices including device isolation structures and methods of manufacturing the same
US9865453B2 · kind B2 · utility
1Cited by
2References
15Claims
0Family size
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Key dates
| Filing date | Jun 24, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Jun 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a plurality of recess regions on an upper surface of a substrate, forming a first oxide layer in the recess regions, forming a polysilicon layer on the first oxide layer, forming a second oxide layer by oxidizing the polysilicon layer, and forming a gap-fill layer on the second oxide layer to fill the recess regions, wherein at least a portion of the polysilicon layer remains between the first oxide layer and the second oxide layer after forming the second oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.