FinFET device with epitaxial structures that wrap around the fins and the method of fabricating the same

US9865595B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chia-Ta Yu · New Taipei, TW
• Sheng-Chen Wang · Hsinchu, TW
• Cheng-Yu Yang · 埔鹽鄉, TW
• Kai-Hsuan Lee · Hsinchu, TW
• Sai-Hooi Yeong · Hengshan, TW
• Feng-Cheng Yang · Dashulong, TW
• Yen-Ming Chen · Taipei, TW

Key dates

• Filing date: Apr 19, 2017
• Grant date: Jan 9, 2018
• Expiry date: Apr 19, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A FinFET device is provided. The FinFET device includes a plurality of fin structures that protrude upwardly out of a dielectric isolation structure. The FinFET device also includes a plurality of gate structures that partially wrap around the fin structures. The fin structures each extend in a first direction, and the gate structures each extend in a second direction different from the first direction. An epitaxial structure is formed over at least a side surface of each of the fin structures. The epitaxial structure includes: a first epi-layer, a second epi-layer, or a third epi-layer. The epitaxial structure formed over each fin structure is separated from adjacent epitaxial structures by a gap. A silicide layer is formed over each of the epitaxial structures. The silicide layer at least partially fills in the gap. Conductive contacts are formed over the silicide layer.