Semiconductor integrated circuit
US9865601B2 · kind B2 · utility
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0References
18Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 16, 2015 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Dec 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
The present disclosure relates to a semiconductor integrated circuit. The semiconductor integrated circuit includes a substrate, a first transistor and a first patterned conductive layer. The first transistor has a source region, a drain region in the substrate and a gate region on the substrate. The first patterned conductive layer is electrically connected to the drain region of the first transistor. The first patterned conductive layer includes a first section, a second section and a fusible device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.