Semiconductor memory device and method for manufacturing same
US9865616B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A semiconductor memory device according to one embodiment includes a stacked body, a semiconductor pillar and a plurality of charge storage films. The stacked body includes a plurality of electrode films and air gaps. The plurality of electrode films are disposed to be separated from each other along a first direction. Each of the air gaps is made between the electrode films. The semiconductor pillar extends in the first direction and pierces the stacked body. The plurality of charge storage films are provided between the semiconductor pillar and the plurality of electrode films. The plurality of charge storage films are partitioned every electrode film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.