Threshold switching device, method for fabricating the same and electronic device including the same
US9865651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Jun 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A threshold switching device may include: a first electrode layer; a second electrode layer; a first insulating layer interposed between the first and second electrode layers, and provided adjacent to the first electrode layer; and a second insulating layer interposed between the first and second electrode layers, and provided adjacent to the second electrode layer, wherein the first and second insulating layers contain a plurality of neutral defects, a concentration of the plurality of neutral defects being at a maximum along a first interface between the first insulating layer and the second insulating layer, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.