Patent · US Active

Semiconductor structure

US9865654B1 · kind B1 · utility

3Cited by
1References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 6, 2017
Grant dateJan 9, 2018
Priority date
Expiry dateJan 6, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/8828

Abstract

A semiconductor structure includes a front side and a back side opposite to the front side, at least a transistor device formed on the front side of the substrate, and an adjustable resistor formed on the back side of the substrate. The adjustable resistor includes at least a phase change material PCM layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.