Laterally diffused metal oxide semiconductor with segmented gate oxide
US9865729B1 · kind B1 · utility
13Cited by
1References
10Claims
0Family size
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Key dates
| Filing date | Dec 20, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Dec 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A power transistor is provided with at least one transistor finger that lies within a semiconductor material. The gate oxide is segmented into a set of segments with thick field oxide between each segment in order to reduce gate capacitance and thereby improve a resistance times gate charge figure of merit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.