Patent · US Active

LED structures for reduced non-radiative sidewall recombination

US9865772B2 · kind B2 · utility

12Cited by
6References
18Claims
0Family size

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Key dates

Filing dateFeb 27, 2017
Grant dateJan 9, 2018
Priority date
Expiry dateFeb 27, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/854

Abstract

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.