Electronic device and method for fabricating the same
US9865806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2016 |
| Grant date | Jan 9, 2018 |
| Priority date | — |
| Expiry date | Nov 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.