Physically unclonable function based on comparison of MTJ resistances
US9870811B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jun 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.