Patent · US Active

Nonvolatile memory device including page buffer and method for verifying program operation thereof

US9870833B2 · kind B2 · utility

4Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 6, 2017
Grant dateJan 16, 2018
Priority date
Expiry dateFeb 6, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/26
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A nonvolatile memory device may include a cell array, a first page buffer, and a second page buffer. The first page buffer may be connected to a first memory cell of the cell array and may store first sensing data generated by sensing whether a program operation of the first memory cell is completed during a program verify operation. The second page buffer may be connected to a second memory cell of the cell array. During the program verify operation, the second page buffer may generate and store first verify data based on second sensing data generated by sensing whether a program operation of the second memory cell is completed, may receive the first sensing data from the first page buffer, and may store second verify data generated by accumulating the first sensing data and the first verify data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.