Distributed on-chip decoupling apparatus and method using package interconnect
US9870982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Oct 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device is disclosed. The integrated circuit device includes a semiconductor die fabricated by a front-end semiconductor process and having oppositely disposed planar surfaces. The semiconductor die is formed with semiconductor devices, power supply circuitry coupled to the semiconductor devices, decoupling capacitance circuitry, and through-vias. The through-vias include a first group of vias coupled to the power supply circuitry and a second group of vias coupled to the decoupling capacitance circuitry. Conductors are formed in a first metal layer disposed on the semiconductor die in accordance with a back-end semiconductor process. The conductors are configured to couple to the first and second groups of through-vias to establish conductive paths from the power supply circuitry to the decoupling capacitance circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.