Static random access memory device and forming method thereof
US9871049B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2017 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | May 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A static random access memory device includes two body contacts and two resistive-switching devices. The body contacts are disposed in a wafer and are exposed from a back side of the wafer, wherein the body contacts electrically connect a static random access memory cell through a metal interconnect in the wafer. The resistive-switching devices connect the two body contacts respectively from the back side of the wafer. A method of forming a static random access memory device is also provided in the following. A wafer having two body contacts exposed from a back side of the wafer and a metal interconnect electrically connecting a static random access memory cell to the body contacts is provided. Two resistive-switching devices are formed to connect the two body contacts respectively from the back side of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.