Infrared image sensor component
US9871067B2 · kind B2 · utility
0Cited by
8References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 23, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Feb 23, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.