Patent · US Active

Discrete semiconductor transistor

US9871126B2 · kind B2 · utility

1Cited by

14References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Andreas Kiep · Munich, DE
Stefan Willkofer · Munich, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Jun 16, 2014
Grant date	Jan 16, 2018
Priority date	—
Expiry date	Jun 16, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/47
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of −40° C. is greater than at the temperature of 150° C.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.