Extended drain metal-oxide-semiconductor transistor
US9871132B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
Devices and methods for forming a device are disclosed. A transistor is formed on the substrate. The transistor includes a gate, a source and a drain. An insulation layer is formed on the substrate. The insulation layer is partially disposed on the gate and a sidewall of the gate. The drain is offset from the gate by the insulation layer. An overlayer is formed on the substrate covering the transistor and insulation layer. A field plate in the form of a field plate contact is formed in the overlayer. The field plate contact is disposed on and coupled to the insulation layer for mitigating the formation of electric field adjacent to drain side of the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.