Manufacturable RGB laser diode source
US9871350B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2016 |
| Grant date | Jan 16, 2018 |
| Priority date | — |
| Expiry date | Jun 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.