Patent · US Active

Method for hotspot detection and ranking of a lithographic mask

US9874821B2 · kind B2 · utility

0Cited by

5References

8Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Sandip Halder · Bierbeek, BE
Dieter Van Den Heuvel · Westerlo, BE
Vincent Truffert · Woluwe-Saint-Pierre - Sint-Pieters-Woluwe, BE
Philippe Leray · La Hulpe, BE

Key dates

Filing date	Apr 21, 2016
Grant date	Jan 23, 2018
Priority date	—
Expiry date	Aug 18, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG01N2021/95676
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The present disclosure is related to a method for detecting and ranking hotspots in a lithographic mask used for printing a pattern on a substrate. According to example embodiments, the ranking is based on defect detection on a modulated focus wafer or a modulated dose wafer, where the actual de-focus or dose value at defect locations is taken into account, in addition to a de-focus or dose setting applied to a lithographic tool when a mask pattern is printed on the wafer. Additionally or alternatively, lithographic parameters other than the de-focus or dose can be used as a basis for the ranking method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.