Sensing phase-change memory/test cells for determining whether a cell resistance has changed due to thermal exposure
US9875794B2 · kind B2 · utility
4Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2013 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Jan 7, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.