Patent · US Active

Interconnect structure with air-gaps

US9875967B2 · kind B2 · utility

1Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 21, 2017
Grant dateJan 23, 2018
Priority date
Expiry dateMar 21, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure relates to an interconnect structure. In some embodiments, the interconnect structure has a first conductive body arranged within a first dielectric layer over a substrate. A first air-gap separates sidewalls of the first conductive body from the first dielectric layer. A barrier layer is arranged on sidewalls of the first conductive body at a location between the first conductive body and the first air-gap. The first air-gap is defined by a sidewall of the barrier layer and an opposing sidewall of the first dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.