Interconnect structure with air-gaps
US9875967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2017 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Mar 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to an interconnect structure. In some embodiments, the interconnect structure has a first conductive body arranged within a first dielectric layer over a substrate. A first air-gap separates sidewalls of the first conductive body from the first dielectric layer. A barrier layer is arranged on sidewalls of the first conductive body at a location between the first conductive body and the first air-gap. The first air-gap is defined by a sidewall of the barrier layer and an opposing sidewall of the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.