Image sensor having vertical transfer gate and method for fabricating the same
US9876042B2 · kind B2 · utility
8Cited by
3References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
The present disclosure provides an image sensor. An image sensor may include: a transfer gate formed over a first substrate, and having a through-hole; a column-shaped epitaxial body having a first portion filled in the through-hole and a second portion formed over the transfer gate; a photoelectric conversion element formed in the second portion of the epitaxial body; and a floating diffusion region formed in the first substrate, and contacting the first portion of the epitaxial body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.