Method for forming patterns and method for manufacturing magnetic memory device using the same
US9876165B2 · kind B2 · utility
1Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | Jun 13, 2016 |
| Grant date | Jan 23, 2018 |
| Priority date | — |
| Expiry date | Jun 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A method for forming a pattern, the method including forming an etch target layer on a substrate; patterning the etch target layer to form patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and performing a sputter etch process to remove at least a portion of the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.